smd type 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source 2SK3116 features low gate charge q g = 26 nc typ. (i d =7.5a,v dd = 450 v, v gs =10v) gate voltage rating 30 v low on-state resistance r ds(on) =1.2 max. (v gs =10v,i d =3.75a) avalanche capability ratings electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =600v,v gs =0 100 a gate leakage current i gss v gs = 30v,v ds =0 100 a gate to source cut off voltage v gs(off) v ds =10v,i d =1ma 2.5 3.5 v forward transfer admittance y fs v ds =10v,i d =3.75a 2.0 s drain to source on-state resistance r ds(on) v gs =10v,i d =3.75a 0.9 1.2 input capacitance c iss 1100 pf output capacitance c oss 200 pf reverse transfer capacitance c rss 20 pf turn-on delay time t on 18 ns rise time t r 15 ns turn-off delay time t off 50 ns fall time tf 15 ns v ds =10v,v gs =0,f=1mhz i d =3.75a,v gs(on) =10v,v dd =150v,r g =1 0 ,r l =50 absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 600 v gate to source voltage v gss 30 v i d 7.5 a i dp * 30 a power dissipation t a =25 1.5 t c =25 70 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
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